FET2DDeviceSetupParameters¶

class FET2DDeviceSetupParameters(gate_type, lgate, gate_material_name, ttox, oxide_material_name, til, lcontact, lspacer, lbackgate=PhysicalQuantity(0.0, mum), tbox=PhysicalQuantity(0.0, mum), ch_dop=PhysicalQuantity(0.0, 1 / cm**3), sd_dop=PhysicalQuantity(0.0, 1 / cm**3), nit=PhysicalQuantity(0.0, 1 / cm**3), nit_bg=PhysicalQuantity(0.0, 1 / cm**3), mumax=PhysicalQuantity(50.0, cm**2 / V / s))¶

Serializable container for parameters to set up a 2DFET device.

Parameters:

gate_type (enum) – The gate type from GATE_TYPES.
lgate (PhysicalQuantity of type length) – The length of the top gate.
gate_material_name (str) – The name of the gate material.
ttox (PhysicalQuantity of type length) – The thickness of the top oxide.
oxide_material_name (str) – The name of the oxide material.
til (PhysicalQuantity of type length) – The thickness of the insulating layer between the top oxide and the channel.
lcontact (PhysicalQuantity of type length) – The length of the contact.
lspacer (PhysicalQuantity of type length) – The length of the spacer.
lbackgate (PhysicalQuantity of type length) – The length of the back gate.
tbox (PhysicalQuantity of type length) – The thickness of the bottom oxide.
ch_dop (PhysicalQuantity of type inverse volume) – The doping concentration of the channel.
sd_dop (PhysicalQuantity of type inverse volume) – The doping concentration of the source and drain.
nit (PhysicalQuantity of type inverse volume) – The interface trap concentration of the top oxide.
nit_bg (PhysicalQuantity of type inverse volume) – The interface trap concentration of the bottom oxide.
mumax (int) – The scattering limited mobility, a parameter used in SDevice.

chDop()¶

Returns:: The doping concentration of the channel.
Return type:: PhysicalQuantity of type inverse volume

gateMaterialName()¶

Returns:: The name of the gate material.
Return type:: str

gateType()¶

Returns:: The gate type.
Return type:: enum

lbackgate()¶

Returns:: The length of the back gate.
Return type:: PhysicalQuantity of type length

lcontact()¶

Returns:: The length of the contact.
Return type:: PhysicalQuantity of type length

lgate()¶

Returns:: The length of the top gate.
Return type:: PhysicalQuantity of type length

lspacer()¶

Returns:: The length of the spacer.
Return type:: PhysicalQuantity of type length

mumax()¶

Returns:: The scattering limited mobility, a parameter used in SDevice.
Return type:: int

nit()¶

Returns:: The interface trap concentration of the top oxide.
Return type:: PhysicalQuantity of type inverse volume

nitBg()¶

Returns:: The interface trap concentration of the bottom oxide.
Return type:: PhysicalQuantity of type inverse volume

nlinfo()¶

Create a nicely formatted dict for presentation in the gui.

Returns:: The study information.
Return type:: dict

oxideMaterialName()¶

Returns:: The name of the oxide material.
Return type:: str

sdDop()¶

Returns:: The doping concentration of the source and drain.
Return type:: PhysicalQuantity of type inverse volume

tbox()¶

Returns:: The thickness of the bottom oxide.
Return type:: PhysicalQuantity of type length

til()¶

Returns:: The thickness of the insulating layer between the top oxide and the channel.
Return type:: PhysicalQuantity of type length

ttox()¶

Returns:: The thickness of the top oxide.
Return type:: PhysicalQuantity of type length

uniqueString()¶: Return a unique string representing the state of the object.

Usage Examples¶

../../../_images/DeviceSetup.png — Fig. 215 Visualization of the device setup used in Example 1. Yellow areas are contacts (metals), bright green areas are spacers (none/vacuum), the orange area is the gate (metal), blue areas are oxides, the dark-green area is the representative insulating layer (none/vacuum) between the oxide and the channel and the dark blue area is the 2D channel.¶

Example 1. Set up a custom device design based on Figure 1.

from QuantumATK import *
from AddOns.FET2D.Study.FET2DDeviceSetupParameters import FET2DDeviceSetupParameters

# Define the device setup parameters.
device_setup = FET2DDeviceSetupParameters(
    gate_type=GATE_TYPES.SINGLE_GATE,
    lgate=0.008 * um,
    gate_material_name='Gold',
    ttox=0.0025 * um,
    oxide_material_name='SiO2',
    til=0.002 * um,
    lcontact=0.015 * um,
    lspacer=0.008 * um,
    lbackgate=0.034 * um,
    back_gate_material_name='Gold',
    tbox=0.0025 * um,
    ch_dop=0.0 * cm**-3,
    sd_dop=0.0 * cm**-3,
    nit=0.0 * cm**-3,
    nit_bg=0.0 * cm**-3,
    mumax=50.0 * cm**2 / V / s,
)

Example1.py

Gate types¶

Variable name	Description
GATE_TYPES.SINGLE_GATE	An FET with a single gate on top of the channel.
GATE_TYPES.DOUBLE_GATE	An FET with one gate on top of the channel and a longer ‘back gate’ below the channel. This choice also enables additional device dimensions, such as the back gate overlap length, to be set.